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AO4494L N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO4494L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications.
Features
VDS (V) = 30V ID = 18A RDS(ON) < 6.5m RDS(ON) < 9.5m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
SOIC-8 D
D
G S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current
C C C
G S
Maximum 30 20 18 14 130 32 51 3.1 2 -55 to 150
Units V V A A mJ W C
TC=25C TC=70C
ID IDM IAR EAR PD TJ, TSTG
Repetitive avalanche energy L=0.1mH Power Dissipation B TC=25C TC=70C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 28 59 16
Max 40 75 24
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=125C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=18A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=16A Forward Transconductance VDS=5V, ID=18A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current 1270 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 170 87 0.8 24 VGS=10V, VDS=15V, ID=18A 12 4.2 4.7 VGS=10V, VDS=15V, RL=0.83, RGEN=3 IF=18A, dI/dt=500A/s 22 19 TJ=125C 1.5 130 5.4 8.4 7.5 70 0.75 1 3 1590 240 145 1.5 30 15 5.2 7.8 6.7 3.5 22.5 4 28 24 34 30 1900 310 200 2.3 36 18 6.2 11 6.5 10.1 9.5 2 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/s
A. The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX)=150C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature T J(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. D. The RJA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=150C. The SOA curve provides a single pulse rating. Rev0: Sept 2008
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
140 120 100 7V ID (A) ID(A) 80 60 40 20 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 10 RDS(ON) (m) VGS=4.5V 8 6 4 2 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V Normalized On-Resistance 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 Temperature (C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 3.5V 20 VGS=3V 0 0 1 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 125C 25C 4V 60 40 10V 6V 100 5V 4.5V 80 VDS=5V
VGS=10V ID=18A
17 5 VGS=4.5V 2 ID=16A 10
25 ID=18A 20 RDS(ON) (m) 15 125C 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
1.0E+02 1.0E+01 1.0E+00 IS (A) 1.0E-01 1.0E-02 1.0E-03 25C 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
40
125C 25C
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=18A Capacitance (pF) 2200 2000 1800 1600 1400 1200 1000 800 600 400 200 0 0 15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 30 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Ciss
8
VGS (Volts)
6
4
2
90.00 ID(A), Peak Avalanche Current 80.00 70.00 60.00 50.00 40.00 30.00 20.00 0.000001 TA=150C TA=125C TA=25C 10s TA=100C
1000.0 100.0
RDS(ON) limited 10s 100s 1ms TJ(Max)=150C TA=25C
0.1 1 10
ID (Amps)
10.0 1.0 0.1 0.0
10ms 100ms 10s DC
100
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1000
TA=25C
Power (W)
100
10
1 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 ZJA Normalized Transient Thermal Resistance In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=40C/W
1
40
0.1 PD Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 T 100 1000
0.01
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AO4494L
Gate Charge Test Circuit & W aveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg Vgs
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs
VDC
E AR= 1/2 LIAR Vds
2
BVDSS
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds -
Isd Vgs
L
Isd
IF
VDC
+ Vdd Vds
dI/dt I RM Vdd
Ig
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

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